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Labaran Masana'antu: Fasaha ta IVWorks'reGaN tana ba da damar GaN HEMT na farko na 742GHz

Labaran Masana'antu: Fasaha ta IVWorks'reGaN tana ba da damar GaN HEMT na farko na 742GHz

Labaran Masana'antu Fasahar reGaN ta IVWorks ta ba da damar GaN HEMT na farko na 742GHz

Hoto: Injiniyan IVWorks yana daidaita tushen plasma don amfani da shi a cikin tsarin MBE mai haɗaka, yana tallafawa babban daidaito da haɓakar epitaxial na GaN mai inganci.

Wani transistor mai karfin lantarki mai karfin gallium nitride (GaN) (HEMT) wanda ya kunshi fasahar reGaN selective regrowth ta mallakar IVWorks Co Ltd na Daejeon, Koriya ta Kudu ya zama transistor na GaN na farko a duniya da ya cimma matsakaicin mitar juyawa (f).matsakaicin) ya wuce 700GHz. An nuna wannan ta hanyar na'urar GaN HEMT mai ƙarfin 45nm wadda ƙungiyar bincike ta farfesa Dae-hyun Kim ta ƙirƙiro a Makarantar Injiniyan Lantarki a Jami'ar Kyungpook ta Ƙasa kuma an bayyana ta a ranar 18 ga Yuni a taron IEEE/JSAP na 2026 kan Fasaha da Da'irori na VLSI a Honolulu, Hawaii, Amurka.

Ƙungiyar binciken ta ƙera wani transistor na GaN mai tsawon ƙofar 45nm kuma ta cimma rikodin fmatsakaicinna 742GHz, wanda ya kafa sabon ma'auni don aikin RF a cikin fasahar transistor ta GaN. Na'urar ta kuma sami matsakaicin ma'aunin mita (favg) na 497GHz, mafi girman ƙimar da aka ruwaito zuwa yanzu ga kowace fasahar transistor ta GaN. Waɗannan sakamakon sun nuna cewa na'urorin semiconductors na GaN suna da isasshen gasa a aiki ko da a cikin tsarin mita mai yawa kuma suna iya zama dandamali mai kyau ga tsarin lantarki na sub-terahertz da terahertz na gaba, in ji IVWorks.

Duk da cewa transistors masu tushen indium phosphide (InP) sun daɗe suna mamaye tsarin mitar sub-terahertz saboda kyawawan halayen jigilar electrons, ƙarancin ƙarfin wutar lantarki na rushewa yana iyakance ƙarfin fitarwa da ƙarfin tsarin. Sabanin haka, GaN yana ba da haɗin kai na musamman na filin wutar lantarki mai lalacewa, yawan wutar lantarki mai yawa, da kuma kyakkyawan ƙarfin zafi, wanda hakan ya sa su zama 'yan takara masu jan hankali don aikace-aikacen mita mai girma da ƙarfi na zamani. Duk da haka, cimma aikin mita mai girma da GaN ya kasance babban ƙalubale. Don shawo kan waɗannan ƙuntatawa, ƙungiyar bincike ta yi amfani da tsarin ƙofar 45nm mai ci gaba da ingantaccen tsarin na'ura don haɓaka aikin mita mai yawa.

Babban abin ƙarfafawa shine fasahar sake girma reGaN ta mallakar IVWorks. An haɓaka reGaN ne kawai ta hanyar IVWorks, kuma yana sake girma sosai a cikin nau'in n-type GaN a cikin yankuna na tushen da magudanar ruwa, wanda hakan ke rage juriyar hulɗa sosai. A matsayin abokin hulɗa na haɗin gwiwa a cikin wannan binciken, IVWorks ya nuna abin da ake da'awar cewa shine kyakkyawan daidaiton tsari a cikin dukkan wafer mai inci 4 kuma ya sami nasarar sake haifuwa mai ban mamaki. Bugu da ƙari, kamfanin ya rage juriyar sake girma ta hanyar haɗin gwiwa (R)int) zuwa 0.027Ω-mm, yana kusantar iyakar ka'idar da za a iya cimmawa a daidai yawan masu ɗaukar kaya.

"Wannan binciken ya tura iyakokin aikin RF na GaN HEMTs zuwa wani sabon mataki kuma ya nuna yuwuwar na'urorin semiconductors na GaN don aikace-aikacen mita mai yawa ta hanyar gwajin farko na duniya na GaN HEMT tare da h sama da 700GHz," in ji farfesa Dae-hyun Kim. "Binciken yana da ma'ana musamman a matsayin misali mai nasara na haɗin gwiwar masana'antu da ilimi, tare da haɗa ci gaban epitaxial da fasahar sake girma daga masana'antu tare da ƙwarewar jami'a a cikin binciken na'urori da kewaye," in ji shi.

"Gina wannan nasarar, muna shirin ƙara hanzarta haɓaka na'urorin lantarki na GaN na zamani waɗanda ke mai da hankali kan aikace-aikacen terahertz-frequency don sadarwa ta 6G da fasahar tsaro ta zamani."

IVWorks ta ce wannan nasarar ta ƙara nuna ƙarfin da fasahar GaN ke da shi na faɗaɗa fiye da fasahar RF ta gargajiya da ta lantarki zuwa aikace-aikacen sub-terahertz da terahertz masu tasowa, gami da sadarwa ta 6G, tsarin radar na zamani, sadarwa ta tauraron ɗan adam, da na'urorin lantarki na tsaro na zamani.

"reGaN babbar fasaha ce da ta riga ta wuce cancantar inganci a wani babban masana'antar hakar ma'adinai kuma an karɓe ta don samar da kayayyaki masu yawa," in ji Shugaba Young-kyun Noh na IVWorks. "Wannan nasarar ta nuna cewa dandamalin reGaN ɗinmu na Hybrid-MBE ba wai kawai yana shirye don kera kayayyaki ba ne, har ma yana da babbar fasaha mai ba da damar samar da kayayyaki ga masu amfani da wutar lantarki na sub-terahertz da terahertz GaN na gaba," in ji shi. "Muna alfahari da ganin fasahar IVWorks ta ba da gudummawa ga wani muhimmin ci gaba a duniya a fannin bincike."


Lokacin Saƙo: Yuli-06-2026